ESF-T30NA
ESF-T30NA
NPN Photoelectric Sensor
Volsentec
Sensing mode: Through beam reflection
Model: NPN, ESF-T30NA
Sensing distance: 30cm
Sensing target: >φ2mm Opaque material
Output type: NPN/PNP,NO,NC set
Differential travel: 10%of set distance max
Light source: Red light 660 nm
Power supply: DC12~24V, impulse (P-P) <10%/DC12~24V pulsation (P-P) less than 10%
Curent consumption: Emitter ≤ 20mA Receiver ≤ 15mA
Circuit protection: Short-aircuit protecion,reverse connection protection
Response Time: <1ms
Ambient illumination: Sunlight:10,000Lx lamplight3,000Lx
Ambient temperature: Work:-25℃~+55℃ iced forbidden Store:-40℃~+70℃ dewde forbidden
Ambient humidity: Work:35~85%RH store:35~95%RH,dewde forbidden
Insulation resistance: 20MΩ or more (DC500V megger) Between the charging unit and the outer shell
Dielectric strength: 1000VAC,50/60Hz 1min
Anti-vibration: 10~55Hz double-amplitude 1.5mm,X,Y,Z(2H)/10~55 Hz
Anti-impact: 500m/S²X,Y,Z3 times
Protection degree: IEC IP65
Connection method: Cable2m-PVC-terminal
Indicator light: Output:Yellow LED; LED/Power:Green LED
Housing material: Housing: PBT; Lens: Optical PMMA; /Housing:PBT Lens:PMMA





