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ESF-T30NA

ESF-T30NA

NPN Photoelectric Sensor

Volsentec

Sensing mode: Through beam reflection

Model: NPN, ESF-T30NA

Sensing distance: 30cm

Sensing target: >φ2mm Opaque material

Output type: NPN/PNP,NO,NC set

Differential travel: 10%of set distance max

Light source: Red light 660 nm

Power supply: DC12~24V, impulse (P-P) <10%/DC12~24V pulsation (P-P) less than 10%

Curent consumption: Emitter ≤ 20mA Receiver ≤ 15mA

Circuit protection: Short-aircuit protecion,reverse connection protection

Response Time: <1ms

Ambient illumination: Sunlight:10,000Lx lamplight3,000Lx

Ambient temperature: Work:-25℃~+55℃ iced forbidden Store:-40℃~+70℃ dewde forbidden

Ambient humidity: Work:35~85%RH store:35~95%RH,dewde forbidden

Insulation resistance: 20MΩ or more (DC500V megger) Between the charging unit and the outer shell

Dielectric strength: 1000VAC,50/60Hz 1min

Anti-vibration: 10~55Hz double-amplitude 1.5mm,X,Y,Z(2H)/10~55 Hz

Anti-impact: 500m/S²X,Y,Z3 times

Protection degree: IEC IP65

Connection method: Cable2m-PVC-terminal

Indicator light: Output:Yellow LED; LED/Power:Green LED

Housing material: Housing: PBT; Lens: Optical PMMA; /Housing:PBT Lens:PMMA

ESF-T30NA

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