Sensing mode: PNP Through beam reflection Ultra-Thin Photoelectric Sensor

PNP: ESB-T20P Contains transmitter and receiver

Sensing distance: 2m

Sensing target: White paper 200X200mm

Output mode: P:PNP

Output state: DC3 wire: NO/NC, DC4 wire: NO, NC setting

Sensing material: >φ7mm Opaque object

Light source: Red light 660nm

Power supply: DC12~24V, impulse pulsation (P-P) <10% (DC10-30V)

Current consumption: Emitter:<20mA; Receiver: <15mA

Load current: ≤100mA(overload protection)

Circuit protection: Short-circuit protection,reverse connection protection

Response frequency: 200Hz

Response time: <1ms

Pointing angle: 3~15°

Indicator light: Output:Red LED,Power:Green LED

Connection: Cable2m-PVC-terminal

Ambient temperature: Work:-25℃~+55℃store:-40℃~+70℃,iced forbidden

Ambient humidity: Work:35~85%RH store:35~95%RH,dewde forbidden

Ambient illumination: Sunlight:10,000Lx lamplight3,000Lx

Withstand voltage: 1000VAC, 50/60Hz 1min between the charging unit and the outer shell

Insulation resistance: >20MΩ(DC500V megger)

Anti-vibration: 10~55 Hz, double-amplitude 1.5mm, X, Y, Z (2H)

Anti-impact: Approx100G(1000m/S²),X,Y,Z(3 times)

Protection degree: IEC IP65

Housing material: Housing: ABS Lens: PM MA